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| DS 35 DSA 35 DSI 35 DSAI 35 Rectifier Diode Avalanche Diode VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A VRSM V 900 1300 1300 1700 1900 V(BR)minyx VRRM V 1300 1750 1950 V 800 1200 1200 1600 1800 Anode on stud DS 35-08A DS 35-12A DSA 35-12A DSA 35-16A DSA 35-18A Cathode on stud DSI 35-08A DSI 35-12A DSAI 35-12A DSAI 35-16A DSAI 35-18A DO-203 AB C A DS DSA A C DSI DSAI x Only for Avalanche Diodes A = Anode C = Cathode 1/4-28UNF Symbol IF(RMS) IF(AVM) PRSM IFSM Test Conditions TVJ = TVJM Tcase = 100C; 180 sine DSA(I) types, TVJ = TVJM, tp = 10 ms TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 80 49 11 650 690 600 640 2100 2000 1800 1700 -40...+180 180 -40...+180 A A kW A A A A As A2s A2s A2s C C C Nm lb.in. g 2 Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips q q It 2 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications High power rectifiers Field supply for DC motors Power supplies q q q TVJ TVJM Tstg Md Weight Mounting torque Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits q q q q 4.5-5.5 40-49 15 Dimensions in mm (1 mm = 0.0394") Symbol IR VF VT0 rT RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM IF = 150 A; TVJ = 25C Characteristic Values 4 1.55 0.85 4.5 1.05 1.25 4.05 3.9 100 mA V V mW K/W K/W mm mm m/s2 For power-loss calculations only TVJ = TVJM DC current DC current Creepage distance on surface Strike distance through air Max. allowable acceleration Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-2 DS 35 DSA 35 250 A 1000 A 900 10000 DSI 35 DSAI 35 50Hz, 80% VRRM 8000 A2s 6000 I2t 4000 VR = 0 V typ. 200 IF 150 lim. 800 IFSM 700 600 TVJ= 180C TVJ= 25C 100 500 400 300 TVJ = 45C TVJ = 180C 2000 TVJ = 45C TVJ = 180C 1000 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms10 89 t 50 200 100 0 0.5 1.0 1.5 VF 2.0 V 0 10-3 Fig. 1 Forward characteristics 100 W 80 PF 60 Fig. 2 Surge overload current IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms) 60 A RthJA : 1.5 K/W 1.9 K/W 2.3 K/W 3.9 K/W 50 IF(AV)M 40 30 40 DC 180 sin 120 60 30 20 20 10 0 0 20 40 60 IF(AV)M 80 A 0 0 50 100 Tamb 0 150 C 200 0 40 80 120 160 C 200 Tcase Fig. 4 Power dissipation versus forward current and ambient temperature 2.0 K/W 1.6 ZthJH 1.2 Fig. 5 Max. forward current at case temperature 180 sine RthJH for various conduction angles d: d DC 180 120 60 30 RthJH (K/W) 1.25 1.37 1.47 1.74 2.08 0.8 Constants for ZthJH calculation: 0.4 i 1 2 3 4 Rthi (K/W) 0.10 0.25 0.70 0.20 ti (s) 0.0012 0.1181 0.6540 2.0 0.0 10-3 10-2 10-1 100 101 t s 102 Fig. 6 Transient thermal impedance junction to heatsink (c) 2000 IXYS All rights reserved 2-2 |
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